ZXMP4A57E6QTA

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Diodes Inc

MOSFET BVDSS: 31V~40V SOT26 T&R

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Diodes Inc

MOSFET BVDSS: 31V~40V SOT26 T&R

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMP4A57E6QTA

Current - Continuous Drain (Id) @ 25°C	2.9 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	833 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

P-Channel Enhancement Mode MOSFET

Part	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Grade
Diodes Inc ZXMP4A57E6TA	SOT-23-6	40 V	P-Channel	Surface Mount	15.8 nC	1.1 W	SOT-26	-55 °C	150 °C	MOSFET (Metal Oxide)	80 mOhm	2.9 A	20 V	833 pF	3 V	4.5 V 10 V
Diodes Inc ZXMP4A57E6QTA	SOT-23-6	40 V	P-Channel	Surface Mount	15.8 nC	1.1 W	SOT-26	-55 °C	150 °C	MOSFET (Metal Oxide)	80 mOhm	2.9 A	20 V	833 pF	3 V	4.5 V 10 V	AEC-Q101	Automotive

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources