PSMP032N08NS1_T0_00601

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Panjit International Inc.

80V/ 3.4MOHM / TJMAX 175C MV MOS

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Panjit International Inc.

80V/ 3.4MOHM / TJMAX 175C MV MOS

Technical Specifications

Parameters and characteristics for this part

Specification	PSMP032N08NS1_T0_00601

Current - Continuous Drain (Id) @ 25°C	166 A
Drain to Source Voltage (Vdss)	80 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Input Capacitance (Ciss) (Max) @ Vds	7430 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs [Max]	3.4 mOhm
Supplier Device Package	TO-220AB-L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.75 V

Part	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PSMP032N08NS1_T0_00601	3.4 mOhm	166 A	TO-220AB-L	TO-220-3	20 V	-55 °C	175 ░C	Through Hole	156 W	7430 pF	80 V	N-Channel	3.75 V	MOSFET (Metal Oxide)	76 nC

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General part information

N-Channel 80 V 166A (Tc) 156W (Tc) Through Hole TO-220AB-L

Technical documentation and resources