RV1C002UNT2CL

NRND

Rohm Semiconductor

MOSFET, N-CH, 20V, 0.15A, 0.1W

Search across all available documentation for this part.

NRND

Rohm Semiconductor

MOSFET, N-CH, 20V, 0.15A, 0.1W

Technical Specifications

Parameters and characteristics for this part

Specification	RV1C002UNT2CL

Current - Continuous Drain (Id) @ 25°C	150 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, No Lead
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs [Max]	2 Ohm
Supplier Device Package	VML0806
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature
Rohm Semiconductor RV1C002UNT2CL	3-SMD No Lead	100 mW	150 mA	MOSFET (Metal Oxide)	2 Ohm	N-Channel	8 V	1.2 V 4.5 V	VML0806	12 pF	20 V	Surface Mount	1 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly