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1SS196(TE85L,F) - SOT-23-3

1SS196(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

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1SS196(TE85L,F) - SOT-23-3

1SS196(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1SS196(TE85L,F)
Capacitance @ Vr, F3 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage @ Vr500 nA
Mounting TypeSurface Mount
Operating Temperature - Junction125 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)4 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageSC-59-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.31
10$ 0.21
100$ 0.10
500$ 0.09
1000$ 0.06
Digi-Reel® 1$ 0.31
10$ 0.21
100$ 0.10
500$ 0.09
1000$ 0.06
Tape & Reel (TR) 3000$ 0.05
6000$ 0.05
9000$ 0.04
30000$ 0.04
75000$ 0.04
150000$ 0.03

Description

General part information

1SS196 Series

Diode 80 V 100mA Surface Mount SC-59-3

Documents

Technical documentation and resources