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LM5102SD - NCT214MT3R2G

LM5102SD

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National Semiconductor

HALF BRIDGE BASED PERIPHERAL DRI

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LM5102SD - NCT214MT3R2G

LM5102SD

Active
National Semiconductor

HALF BRIDGE BASED PERIPHERAL DRI

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5102SD
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]1.6 A
Current - Peak Output (Source, Sink) [custom]1.6 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]118 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]2.2 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case10-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]600 ns
Rise / Fall Time (Typ) [custom]600 ns
Supplier Device Package10-WSON (4x4)
Voltage - Supply [Max]14 V
Voltage - Supply [Min]9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 216$ 1.39
Tape & Reel (TR) 1000$ 1.61
2000$ 1.53
5000$ 1.47

Description

General part information

LM5102 Series

Half-Bridge Gate Driver IC Non-Inverting 10-WSON (4x4)

Documents

Technical documentation and resources

No documents available