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1N5817 - DO-204AL

1N5817

Obsolete
ON Semiconductor

1.0 A, 20 V, SCHOTTKY RECTIFIER

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DocumentsDatasheet
1N5817 - DO-204AL

1N5817

Obsolete
ON Semiconductor

1.0 A, 20 V, SCHOTTKY RECTIFIER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1N5817
Capacitance @ Vr, F110 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr500 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-204AL, DO-41, Axial
Speed200 mA, 500 ns
Supplier Device PackageDO-41
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]20 V
Voltage - Forward (Vf) (Max) @ If450 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 159$ 5.16
Cut Tape (CT) 1$ 0.21
10$ 0.15
100$ 0.08
500$ 0.06
1000$ 0.04
2000$ 0.04
Tape & Reel (TR) 5000$ 0.06
5000$ 0.04
10000$ 0.03
10000$ 0.05
25000$ 0.03
25000$ 0.05
50000$ 0.02
50000$ 0.04
125000$ 0.04
125000$ 0.02

Description

General part information

1N5817 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

Documents

Technical documentation and resources