XPW6R30ANB,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8DSOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8DSOP

Technical Specifications

Parameters and characteristics for this part

Specification	XPW6R30ANB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	132 W, 960 mW
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	8-DSOP Advance
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ	8-PowerVDFN	20 V	Surface Mount	3.5 V	45 A	52 nC	132 W 960 mW	100 V	8-DSOP Advance	MOSFET (Metal Oxide)	3240 pF	175 °C	6 V 10 V	N-Channel	6.3 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 45A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-DSOP Advance

Technical documentation and resources