VS-30APF12PBF

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AC

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30APF12PBF

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	95 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.41 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Package / Case	Technology	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division VS-30APF12PBF	1.41 V	200 mA 500 ns	95 ns	TO-247-3	Standard	TO-247AC	30 A	100 µA	150 °C	-40 °C	1.2 kV	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 30A Through Hole TO-247AC

Technical documentation and resources

No documents available