PJX8802_R1_00001

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Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJX8802_R1_00001

Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	92 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power - Max [Max]
Panjit International Inc. PJX8802_R1_00001	MOSFET (Metal Oxide)	Surface Mount	150 mOhm	20 V	2 N-Channel (Dual)	92 pF	-55 °C	150 °C	1 V	SOT-563	1.6 nC	SOT-563 SOT-666	300 mW

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General part information

Mosfet Array 20V 700mA (Ta) 300mW (Ta) Surface Mount SOT-563

Technical documentation and resources