AOB66613L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 44.5A/120A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 44.5A/120A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB66613L

Current - Continuous Drain (Id) @ 25°C	120 A, 44.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	8.3 W, 260 W
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type
Alpha & Omega Semiconductor Inc. AOB66613L	60 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	3.5 V	-55 °C	150 °C	8.3 W 260 W	20 V	110 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	44.5 A 120 A	8 V 10 V	5300 pF	N-Channel	Surface Mount

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General part information

N-Channel 60 V 44.5A (Ta), 120A (Tc) 8.3W (Ta), 260W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources