BYC75W-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 75A TO247-2

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 75A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYC75W-600PQ

Current - Average Rectified (Io)	75 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.75 V

Part	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology
WeEn Semiconductors Co., Ltd BYC75W-600PQ	200 mA 500 ns	10 µA	175 °C	75 A	TO-247-2	600 V	Through Hole	TO-247-2	50 ns	2.75 V	Standard
WeEn Semiconductors Co., Ltd BYC75W-1200PQ	200 mA 500 ns	250 µA	175 °C	75 A	TO-247-2	1.2 kV	Through Hole	TO-247-2	85 ns		Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 75A Through Hole TO-247-2

Technical documentation and resources

No documents available