MBR30030CTR

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GeneSiC Semiconductor

DIODE MOD SCHOTT 30V 150A 2TOWER

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GeneSiC Semiconductor

DIODE MOD SCHOTT 30V 150A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR30030CTR

Current - Average Rectified (Io) (per Diode)	150 A
Current - Reverse Leakage @ Vr	8 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	650 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Technology	Speed	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MBR30030CTL	150 °C	-55 °C	Chassis Mount	Twin Tower	Twin Tower	580 mV	150 A	3 mA	30 V	1 Pair Common Cathode	Schottky	200 mA 500 ns
GeneSiC Semiconductor MBR30030CTR	150 °C	-55 °C	Chassis Mount	Twin Tower	Twin Tower		150 A	8 mA	30 V	1 Pair Common Anode	Schottky	200 mA 500 ns	650 mV
GeneSiC Semiconductor MBR30030CT	150 °C	-55 °C	Chassis Mount	Twin Tower	Twin Tower		150 A	8 mA	30 V	1 Pair Common Cathode	Schottky	200 mA 500 ns	650 mV
GeneSiC Semiconductor MBR30030CTRL	150 °C	-55 °C	Chassis Mount	Twin Tower	Twin Tower	580 mV	150 A	3 mA	30 V	1 Pair Common Anode	Schottky	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 78.80

General part information

Diode Array 1 Pair Common Anode 30 V 150A Chassis Mount Twin Tower

Technical documentation and resources