AOD2N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO252

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD2N60

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	56.8 W
Rds On (Max) @ Id, Vgs	4.4 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOD2NL60
Alpha & Omega Semiconductor Inc. AOD2N60	11 nC	Surface Mount	325 pF	4.5 V	150 °C	-50 °C	TO-252 (DPAK)	10 V	2 A	30 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.4 Ohm	56.8 W	N-Channel	600 V

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