2SB1386T100R

Rohm Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 20 V, 4 A, 500 MW, SOT-89, SURFACE MOUNT

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Rohm Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 20 V, 4 A, 500 MW, SOT-89, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1386T100R

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Transistor Type	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition
Rohm Semiconductor 2SB1386T100R	PNP	Surface Mount	2 W	20 V	TO-243AA	1 V	5 A	150 °C	180 hFE	500 nA	120 MHz
Rohm Semiconductor 2SB1386T100Q	PNP	Surface Mount	2 W	20 V	TO-243AA	1 V	5 A	150 °C	120 hFE	500 nA	120 MHz

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General part information

The 2SB1386T100R is a -5A PNP low-frequency epitaxial planar Silicon Transistor offers low collector to emitter saturation voltage.

Technical documentation and resources