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R76UR26804030J - KEMET R76TI23304040J

R76UR26804030J

Active
KEMET

POWER FILM CAPACITOR, DOUBLE METALLIZED PP, RADIAL BOX - 2 PIN, 0.068 ΜF, ± 5%, HIGH FREQUENCY

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R76UR26804030J - KEMET R76TI23304040J

R76UR26804030J

Active
KEMET

POWER FILM CAPACITOR, DOUBLE METALLIZED PP, RADIAL BOX - 2 PIN, 0.068 ΜF, ± 5%, HIGH FREQUENCY

Technical Specifications

Parameters and characteristics for this part

SpecificationR76UR26804030J
ApplicationsSwitching, DV/DT, High Frequency, High Pulse
Capacitance0.068 µF
Dielectric MaterialMetallized, Polypropylene (PP)
Height - Seated (Max) [Max] [z]0.87 in
Height - Seated (Max) [Max] [z]22.1 mm
Lead Spacing27.5 mm
Lead Spacing1.083 in
Mounting TypeThrough Hole
Operating Temperature [Max]110 °C
Operating Temperature [Min]-55 °C
Package / CaseRadial
Size / Dimension [x]32 mm
Size / Dimension [x]1.26 in
Size / Dimension [y]13 mm
Size / Dimension [y]0.512 in
TerminationPC Pins
Tolerance5 %
Voltage Rating - AC700 V
Voltage Rating - DC2 kV
Voltage Rating - DC2 kVDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 2.68
10$ 2.06
40$ 1.89
288$ 1.42
576$ 1.26
1152$ 1.10
2592$ 1.06
5184$ 1.02
NewarkEach 1$ 2.97
10$ 1.68
25$ 1.57
50$ 1.45
100$ 1.33
500$ 1.29
1000$ 1.24
2500$ 1.19

Description

General part information

R76UR Series

R76 series double metallized polypropylene film, radial leaded capacitors for DC and pulse applications (automotive grade). R76 series is constructed of polypropylene film and double metallized polyester film as electrodes with radial leads of tinned wire. The radial leads are electrically welded to the metal layer on the ends of the capacitor winding. The capacitor is encapsulated in a self-extinguishing solvent resistant plastic case with thermosetting resin material meeting UL 94 V-0 requirements. Two different winding constructions are used depending on voltage parameters. Typical applications include resonant circuit, high frequency high current, snubber and silicon-controlled rectifier (SCR and IGBT) and SiC (e.g. MOSFET) commutation circuits as well as applications with high voltage and high current.