HER206G

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Taiwan Semiconductor Corporation

75NS, 2A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 2A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HER206G

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AC
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Speed	Technology	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation HER206G	5 µA	Axial DO-15 DO-204AC	200 mA 500 ns	Standard	75 ns	Through Hole	600 V	150 °C	-55 °C	1.7 V	20 pF	DO-204AC	DO-15	2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 2A Through Hole DO-204AC (DO-15)

Technical documentation and resources