PJQ2461_R1_00001

NRND

Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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NRND

Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2461_R1_00001

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJQ2461_R1_00001	2.4 A	-55 °C	150 °C	20 V	DFN2020B-6	190 mOhm	P-Channel	60 V	MOSFET (Metal Oxide)	2 W	8.3 nC	Surface Mount	4.5 V 10 V	2.5 V	430 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 2.4A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources