ZXMHC6A07T8TA

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Diodes Inc

MOSFET, N/P-CH, 60V, 1.8A, SOIC ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, N/P-CH, 60V, 1.8A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMHC6A07T8TA

Configuration	2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	1.3 A, 1.6 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	166 pF, 233 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-223-8
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SM8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Complementary 60V Enhancement Mode MOSFET H-Bridge

Part	Rds On (Max) @ Id, Vgs	FET Feature	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology
Diodes Inc ZXMHC6A07T8TA	300 mOhm	Logic Level Gate	SM8	60 V	1.3 A 1.6 A	-55 °C	150 °C	Surface Mount	SOT-223-8	2 N and 2 P-Channel (Full Bridge)	166 pF 233 pF	3.2 nC	3 V	MOSFET (Metal Oxide)

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