2N4921

Obsolete

ON Semiconductor

MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

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Obsolete

ON Semiconductor

MEDIUM POWER NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N4921

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	30 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Medium Power NPN Bipolar Power Transistor

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Mounting Type	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type
ON Semiconductor 2N4921	TO-126-3 TO-225AA	600 mV	TO-126	Through Hole	3 MHz	150 °C	-65 °C	40 V	30 hFE	1 A	500 çA	30 W	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.