ZXTP03200BGTA

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Diodes Inc

TRANS GP BJT PNP 200V 2A 4-PIN(3+TAB) SOT-223 T/R

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Diodes Inc

TRANS GP BJT PNP 200V 2A 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTP03200BGTA

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	105 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.25 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	275 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

PNP, 200V, 2A, SOT223

Part	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc ZXTP03200BGTA	PNP	275 mV	1.25 W	105 MHz	TO-261-4 TO-261AA	100 hFE	200 V	2 A	SOT-223-3	50 nA	Surface Mount	-55 °C	150 °C
Diodes Inc ZXTP03200BZTA	PNP	260 mV	1.1 W	105 MHz	TO-243AA	100 hFE	200 V	2 A	SOT-89-3	50 nA	Surface Mount	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

TN1.pdf

Technical documentation and resources