AOB470L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 10A/100A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 10A/100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB470L

Current - Continuous Drain (Id) @ 25°C	100 A, 10 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	136 nC
Input Capacitance (Ciss) (Max) @ Vds	5640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	268 W, 2.1 W
Rds On (Max) @ Id, Vgs	10.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AOB470L	75 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	10 V	5640 pF	136 nC	4 V	25 V	-55 °C	175 ░C	10 A 100 A	MOSFET (Metal Oxide)	N-Channel	2.1 W 268 W	TO-263 (D2PAK)	10.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 10A (Ta), 100A (Tc) 2.1W (Ta), 268W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources