UG2DH

Active

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO204AC

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	UG2DH

Capacitance @ Vr, F	35 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AC
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Supplier Device Package	Supplier Device Package	Mounting Type	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Grade	Qualification
Taiwan Semiconductor Corporation UG2D B0G	200 V	25 ns	200 mA 500 ns	DO-204AC	DO-15	Through Hole	35 pF	Axial DO-15 DO-204AC	2 A	Standard	950 mV	150 °C	-55 °C	5 µA
Taiwan Semiconductor Corporation UG2DH	200 V	25 ns	200 mA 500 ns	DO-204AC	DO-15	Through Hole	35 pF	Axial DO-15 DO-204AC	2 A	Standard	950 mV	150 °C	-55 °C	5 µA	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 2A Through Hole DO-204AC (DO-15)

Technical documentation and resources