AS6C1008-55PIN

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Alliance Memory, Inc.

SRAM CHIP ASYNC SINGLE 3V 1M-BIT 128K X 8 55NS

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Active

Alliance Memory, Inc.

SRAM CHIP ASYNC SINGLE 3V 1M-BIT 128K X 8 55NS

Technical Specifications

Parameters and characteristics for this part

Specification	AS6C1008-55PIN

Access Time	55 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 8
Memory Size	1 Mbit
Memory Type	Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	15.24 mm
Package / Case	0.6 in
Package / Case	32-DIP
Supplier Device Package	32-PDIP
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	55 ns
Write Cycle Time - Word, Page [custom]	55 ns

Part	Package / Case	Package / Case	Package / Case	Access Time	Memory Type	Memory Interface	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Size	Memory Format	Voltage - Supply [Min]	Voltage - Supply [Max]	Technology
Alliance Memory, Inc. AS6C1008-55TINL	0.724 in	18.4 mm	32-TFSOP	55 ns	Volatile	Parallel	128K x 8	55 ns	55 ns	32-TSOP I	85 °C	-40 °C	Surface Mount	1 Mbit	SRAM	2.7 V	5.5 V	SRAM - Asynchronous
Alliance Memory, Inc. AS6C1008-55PIN	0.6 in	15.24 mm	32-DIP	55 ns	Volatile	Parallel	128K x 8	55 ns	55 ns	32-PDIP	85 °C	-40 °C	Through Hole	1 Mbit	SRAM	2.7 V	5.5 V	SRAM - Asynchronous

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Access time :55ns

Low power consumption:

Operating current:10 mA (TYP.)

Technical documentation and resources

No documents available