MBRT50080
ObsoleteGeneSiC Semiconductor
DIODE MOD SCHOTT 80V 250A 3TOWER
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MBRT50080
ObsoleteGeneSiC Semiconductor
DIODE MOD SCHOTT 80V 250A 3TOWER
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MBRT50080 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 250 A |
| Current - Reverse Leakage @ Vr | 1 mA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Three Tower |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 80 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 880 mV |
MBRT500 Series
| Part | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Diode Configuration | Supplier Device Package | Current - Reverse Leakage @ Vr | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Technology | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Anode | Three Tower | 1 mA | Three Tower | 880 mV | Chassis Mount | 100 V | 250 A | Schottky | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Anode | Three Tower | 1 mA | Three Tower | 880 mV | Chassis Mount | 80 V | 250 A | Schottky | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Cathode | Three Tower | 1 mA | Three Tower | 750 mV | Chassis Mount | 20 V | 250 A | Schottky | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Anode | Three Tower | 1 mA | Three Tower | 750 mV | Chassis Mount | 45 V | 250 A | Schottky | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Cathode | Three Tower | 1 mA | Three Tower | Chassis Mount | 200 V | 250 A | Schottky | 920 mV | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Anode | Three Tower | 1 mA | Three Tower | 750 mV | Chassis Mount | 20 V | 250 A | Schottky | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Anode | Three Tower | 1 mA | Three Tower | Chassis Mount | 200 V | 250 A | Schottky | 920 mV | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Anode | Three Tower | 1 mA | Three Tower | 880 mV | Chassis Mount | 250 A | Schottky | ||
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Cathode | Three Tower | 1 mA | Three Tower | 880 mV | Chassis Mount | 80 V | 250 A | Schottky | |
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | 1 Pair Common Cathode | Three Tower | 1 mA | Three Tower | 750 mV | Chassis Mount | 35 V | 250 A | Schottky |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBRT500 Series
Diode Array 1 Pair Common Cathode 80 V 250A Chassis Mount Three Tower
Documents
Technical documentation and resources