TK5A45DA(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 4.5A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 4.5A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK5A45DA(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs [Max]	1.75 Ohm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Supplier Device Package	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature
Toshiba Semiconductor and Storage TK5A45DA(STA4,Q,M)	4.5 A	N-Channel	MOSFET (Metal Oxide)	TO-220SIS	TO-220-3 Full Pack	30 V	1.75 Ohm	380 pF	Through Hole	9 nC	450 V	10 V	4.4 V	150 °C

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General part information

N-Channel 450 V 4.5A (Ta) 30W (Tc) Through Hole TO-220SIS

Technical documentation and resources