PE29100A-X

Obsolete

pSemi Corporation

IC GATE DRVR HALF-BRIDGE DIE

Search across all available documentation for this part.

Obsolete

pSemi Corporation

IC GATE DRVR HALF-BRIDGE DIE

Technical Specifications

Parameters and characteristics for this part

Specification	PE29100A-X

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	4 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	100 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rise / Fall Time (Typ) [custom]	2.5 ns
Rise / Fall Time (Typ) [custom]	2.5 ns
Supplier Device Package	Die
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4 V

Part	Supplier Device Package	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Type	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration
pSemi Corporation PE29100A-X	Die	Surface Mount	4 A	2 A	Synchronous	-40 °C	125 ¯C	N-Channel MOSFET	2	100 V	Die	2.5 ns	2.5 ns	5.5 V	4 V	Half-Bridge

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Die

Technical documentation and resources