2SA1930(Q,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 180V 2A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 180V 2A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1930(Q,M)

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	180 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Transistor Type	Power - Max [Max]
Toshiba Semiconductor and Storage 2SA1930(Q,M)	5 µA	1 V	150 °C	2 A	200 MHz	TO-220NIS	100 hFE	Through Hole	180 V	TO-220-3 Full Pack	PNP	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS

Technical documentation and resources