ZXTN19060CGTA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 7A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-223, 4 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 7A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-223, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTN19060CGTA

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN, 60V, 7A, SOT223

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]
Diodes Inc ZXTN19060CGTA	60 V	Surface Mount	130 MHz	7 A	300 mV	3 W	NPN	TO-261-4 TO-261AA	SOT-223-3	200	-55 °C	150 °C	50 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 60V, 7A, SOT223

Technical documentation and resources