S25JR

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GeneSiC Semiconductor

DIODE GEN PURP 600V 25A DO220AA

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GeneSiC Semiconductor

DIODE GEN PURP 600V 25A DO220AA

Technical Specifications

Parameters and characteristics for this part

Specification	S25JR

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
GeneSiC Semiconductor S25JR	10 µA	Reverse Polarity Standard	175 ░C	-65 C	Chassis Stud Mount	Standard Recovery >500ns	200 mA	1.1 V	DO-203AA DO-4 Stud	600 V	25 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1500	$ 4.38

General part information

Diode 600 V 25A Chassis, Stud Mount

Technical documentation and resources