BY25Q128ESSIG(R)

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BYTe Semiconductor

IC FLASH 128MBIT SPI/QUAD 8SOP

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BYTe Semiconductor

IC FLASH 128MBIT SPI/QUAD 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	BY25Q128ESSIG(R)

Access Time	7.5 ns
Clock Frequency	120 MHz
Memory Format	FLASH
Memory Interface	SPI - Quad I/O
Memory Organization	16M x 8
Memory Size	128 Mb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.209 "
Package / Case [y]	5.3 mm
Supplier Device Package	8-SOP
Technology	FLASH - NOR (SLC)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	60 µs
Write Cycle Time - Word, Page [custom]	2.4 ms

Part	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization	Memory Size	Access Time	Mounting Type	Memory Interface	Package / Case [y]	Package / Case	Package / Case [x]	Supplier Device Package	Clock Frequency	Voltage - Supply [Min]	Voltage - Supply [Max]	Technology	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Format
BYTe Semiconductor BY25Q128ESSIG(R)	Non-Volatile	85 °C	-40 °C	16M x 8	128 Mb	7.5 ns	Surface Mount	SPI - Quad I/O	5.3 mm	8-SOIC	0.209 "	8-SOP	120 MHz	2.7 V	3.6 V	FLASH - NOR (SLC)	60 µs	2.4 ms	FLASH

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

FLASH - NOR (SLC) Memory IC 128Mbit SPI - Quad I/O 120 MHz 7.5 ns 8-SOP

Technical documentation and resources