AOW482

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 11A/105A TO262

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 11A/105A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW482

Current - Continuous Drain (Id) @ 25°C	105 A, 11 A
Drain to Source Voltage (Vdss)	80 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Input Capacitance (Ciss) (Max) @ Vds	4870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	2.1 W, 333 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.7 V

Part	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOW482	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	81 nC	N-Channel	Through Hole	4870 pF	11 A 105 A	-55 °C	175 ░C	7.2 mOhm	25 V	3.7 V	80 V	2.1 W 333 W	TO-262

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.08