BY25Q256FSWIG(R)

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BYTe Semiconductor

IC FLASH 256MBIT SPI/QUAD

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BYTe Semiconductor

IC FLASH 256MBIT SPI/QUAD

Technical Specifications

Parameters and characteristics for this part

Specification	BY25Q256FSWIG(R)

Access Time	7 ns
Clock Frequency	100 MHz
Memory Format	FLASH
Memory Interface	Quad I/O, QPI, SPI
Memory Organization	32 M
Memory Size	256 Gbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-WSON (5x6)
Technology	FLASH - NOR (SLC)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	50 µs
Write Cycle Time - Word, Page [custom]	2.4 ms

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Size	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Technology	Memory Interface	Clock Frequency	Mounting Type	Memory Type	Supplier Device Package	Memory Format	Package / Case	Memory Organization
BYTe Semiconductor BY25Q256FSWIG(R)	2.7 V	3.6 V	85 °C	-40 °C	7 ns	256 Gbit	50 µs	2.4 ms	FLASH - NOR (SLC)	QPI Quad I/O SPI	100 MHz	Surface Mount	Non-Volatile	8-WSON (5x6)	FLASH	8-WDFN Exposed Pad	32 M

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

FLASH - NOR (SLC) Memory IC 256Mbit SPI - Quad I/O, QPI 100 MHz 7 ns 8-WSON (5x6)

Technical documentation and resources