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IS66WVE1M16EBLL-70BLI - 48TFBGA

IS66WVE1M16EBLL-70BLI

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ISSI, Integrated Silicon Solution Inc

16MB,PSEUDO SRAM,ASYNCH/PAGE, 1M X 16,70NS,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 BALL BGA (6X8 MM), ROHS

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IS66WVE1M16EBLL-70BLI - 48TFBGA

IS66WVE1M16EBLL-70BLI

Active
ISSI, Integrated Silicon Solution Inc

16MB,PSEUDO SRAM,ASYNCH/PAGE, 1M X 16,70NS,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 BALL BGA (6X8 MM), ROHS

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Technical Specifications

Parameters and characteristics for this part

SpecificationIS66WVE1M16EBLL-70BLI
Access Time70 ns
Memory FormatPSRAM
Memory InterfaceParallel
Memory Organization1 M
Memory Size16 Mb
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x8)
TechnologyPSRAM (Pseudo SRAM)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 480$ 2.63
NewarkEach 250$ 2.20
500$ 2.13

Description

General part information

IS66WVE1M16 Series

Dual voltage rails for optional performance: Vdd 2.7V to 3.6V, Vddq 2.7V to 3.6V

Page mode read accessInterpage Read access : 60ns, 70nsIntrapage Read access : 25ns

Interpage Read access : 60ns, 70ns

Documents

Technical documentation and resources

No documents available