
IS66WVE1M16EBLL-70BLI
ActiveISSI, Integrated Silicon Solution Inc
16MB,PSEUDO SRAM,ASYNCH/PAGE, 1M X 16,70NS,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 BALL BGA (6X8 MM), ROHS
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IS66WVE1M16EBLL-70BLI
ActiveISSI, Integrated Silicon Solution Inc
16MB,PSEUDO SRAM,ASYNCH/PAGE, 1M X 16,70NS,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 BALL BGA (6X8 MM), ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS66WVE1M16EBLL-70BLI |
|---|---|
| Access Time | 70 ns |
| Memory Format | PSRAM |
| Memory Interface | Parallel |
| Memory Organization | 1 M |
| Memory Size | 16 Mb |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Technology | PSRAM (Pseudo SRAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS66WVE1M16 Series
Dual voltage rails for optional performance: Vdd 2.7V to 3.6V, Vddq 2.7V to 3.6V
Page mode read accessInterpage Read access : 60ns, 70nsIntrapage Read access : 25ns
Interpage Read access : 60ns, 70ns
Documents
Technical documentation and resources
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