PJW4N06A-AU_R2_000A1

Active

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Active

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJW4N06A-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	509 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Grade	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Panjit International Inc. PJW4N06A-AU_R2_000A1	Surface Mount	TO-261-4 TO-261AA	-55 °C	175 ░C	20 V	Automotive	4 A	100 mOhm	60 V	N-Channel	2.5 V	SOT-223	AEC-Q101	509 pF	MOSFET (Metal Oxide)	4.5 V 10 V	3.7 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 4A (Ta) 3.7W (Ta) Surface Mount SOT-223

Technical documentation and resources

No documents available