VS-VSKE320-12PBF

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Vishay General Semiconductor - Diodes Division

DIODE GP 1.2KV 320A MAGNAPAK

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Vishay General Semiconductor - Diodes Division

DIODE GP 1.2KV 320A MAGNAPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKE320-12PBF

Current - Average Rectified (Io)	320 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-MAGN-A-PAK™
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	MAGN-A-PAK®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Package / Case	Current - Average Rectified (Io)	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-VSKE320-20PBF	150 °C	-40 °C	Chassis Mount	3-MAGN-A-PAK™	320 A	Standard Recovery >500ns	200 mA	2000 V	MAGN-A-PAK®	Standard
Vishay General Semiconductor - Diodes Division VS-VSKE320-12PBF	150 °C	-40 °C	Chassis Mount	3-MAGN-A-PAK™	320 A	Standard Recovery >500ns	200 mA	1.2 kV	MAGN-A-PAK®	Standard	50 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 320A Chassis Mount MAGN-A-PAK®

Technical documentation and resources

No documents available