2SK2463T100

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Rohm Semiconductor

MOSFET N-CH 60V 2A MPT3

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Rohm Semiconductor

MOSFET N-CH 60V 2A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2463T100

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Package / Case	Vgs(th) (Max) @ Id [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs
Rohm Semiconductor 2SK2463T100	TO-243AA	2.5 V	N-Channel	4 V	10 V	MOSFET (Metal Oxide)	60 V	Surface Mount	150 °C	2 A	500 mW	200 pF	20 V	380 mOhm

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General part information

N-Channel 60 V 2A (Ta) 500mW (Ta) Surface Mount MPT3

Technical documentation and resources