SUF4007-CT

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Diotec Semiconductor

DIODE GEN PURP 1KV 1A DO213AB

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Diotec Semiconductor

DIODE GEN PURP 1KV 1A DO213AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUF4007-CT

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	DO-213AB, MELF
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-213AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Diotec Semiconductor SUF4007-CT	DO-213AB MELF	Surface Mount	1 A	-50 °C	175 ░C	75 ns	Standard	1000 V	5 µA	200 mA 500 ns	1.7 V	DO-213AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 1000 V 1A Surface Mount DO-213AB

Technical documentation and resources