2STN2540
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -40 V, 1.6 W, -5 A, 250 ROHS COMPLIANT: YES
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2STN2540
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -40 V, 1.6 W, -5 A, 250 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2STN2540 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 hFE |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1.6 W |
| Supplier Device Package | SOT-223 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 450 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2STN2540 Series
The device in a PNP transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Documents
Technical documentation and resources