ARS5045 B0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 45V 50A ARS

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Taiwan Semiconductor Corporation

DIODE GEN PURP 45V 50A ARS

Technical Specifications

Parameters and characteristics for this part

Specification	ARS5045 B0G

Capacitance @ Vr, F	2700 pF
Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	ARS
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	ARS
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Speed	Package / Case	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Taiwan Semiconductor Corporation ARS5045 B0G	2700 pF	550 mV	150 ns	500 µA	200 mA 500 ns	ARS	50 A	Standard	45 V	Surface Mount	175 ░C	-55 C	ARS

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General part information

Diode 45 V 50A Surface Mount ARS

Technical documentation and resources

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