W4767MC220

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IXYS

DIODE GEN PURP 2.2KV 4755A W54

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IXYS

DIODE GEN PURP 2.2KV 4755A W54

Technical Specifications

Parameters and characteristics for this part

Specification	W4767MC220

Current - Average Rectified (Io)	4755 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Clamp On
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AC, K-PUK
Reverse Recovery Time (trr)	26 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	W54
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2200 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Reverse Recovery Time (trr)	Technology
IXYS W4767MC220	W54	4755 A	50 mA	1.05 V	Standard Recovery >500ns	200 mA	2200 V	Clamp On	-40 °C	175 ░C	DO-200AC K-PUK	26 µs	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	12	$ 169.66

General part information

Diode 2200 V 4755A Clamp On W54

Technical documentation and resources

No documents available