GE12050EEA3

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GE Aerospace

SIC 6N-CH 1200V 475A MODULE

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GE Aerospace

SIC 6N-CH 1200V 475A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE12050EEA3

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	475 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	1248 nC
Input Capacitance (Ciss) (Max) @ Vds	29300 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Configuration
GE Aerospace GE12050EEA3	475 A	4.4 mOhm	1248 nC	Chassis Mount	29300 pF	1200 V	1.2 kV	Module	Module	4.5 V	Silicon Carbide (SiC)	150 °C	-55 °C	6 N-Channel (3-Phase Bridge)

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General part information

Mosfet Array 1200V (1.2kV) 475A (Tc) 1250W (Tc) Chassis Mount Module

Technical documentation and resources