VS-16FL100S05

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 16A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 16A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-16FL100S05

Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Supplier Device Package	Speed	Technology	Package / Case
Vishay General Semiconductor - Diodes Division VS-16FL100S05	50 µA	Chassis Stud Mount	16 A	1000 V	1.4 V	150 °C	-65 C	500 ns	DO-203AA	DO-4	200 mA 500 ns	Standard	DO-203AA DO-4 Stud

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General part information

Diode 1000 V 16A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources