MPQ2369 TIN/LEAD

Obsolete

Central Semiconductor Corp

TRANS 4NPN 15V 0.5A

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Obsolete

Central Semiconductor Corp

TRANS 4NPN 15V 0.5A

Technical Specifications

Parameters and characteristics for this part

Specification	MPQ2369 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max)	400 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20 hFE
Frequency - Transition	450 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Power - Max [Max]	500 mW
Supplier Device Package	TO-116
Transistor Type	4 NPN (Quad)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	15 V

Part	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
Central Semiconductor Corp MPQ2369 TIN/LEAD	400 nA	20 hFE	15 V	14-DIP	7.62 mm	0.3 "	250 mV	TO-116	4 NPN (Quad)	150 °C	-65 °C	Through Hole	450 MHz	500 mA	500 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 4 NPN (Quad) 15V 500mA 450MHz 500mW Through Hole TO-116

Technical documentation and resources