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TH58BYG2S3HBAI6 - 67-VFBGA

TH58BYG2S3HBAI6

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Kioxia America, Inc.

IC FLASH 4GBIT PARALLEL 67VFBGA

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TH58BYG2S3HBAI6 - 67-VFBGA

TH58BYG2S3HBAI6

Active
Kioxia America, Inc.

IC FLASH 4GBIT PARALLEL 67VFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTH58BYG2S3HBAI6
Access Time25 ns
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization512 M
Memory Size512 kb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)
Supplier Device Package [x]6.5
Supplier Device Package [y]8
TechnologyFLASH - NAND (SLC)
Voltage - Supply [Max]1.95 V
Voltage - Supply [Min]1.7 V
Write Cycle Time - Word, Page25 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 338$ 4.57

Description

General part information

TH58BYG2 Series

FLASH - NAND (SLC) Memory IC 4Gbit Parallel 25 ns 67-VFBGA (6.5x8)

Documents

Technical documentation and resources

No documents available