2N6111

Obsolete

ON Semiconductor

7.0 A, 30 V PNP BIPOLAR POWER TRANSISTOR

Search across all available documentation for this part.

Obsolete

ON Semiconductor

7.0 A, 30 V PNP BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6111

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

7.0 A, 30 V PNP Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Frequency - Transition	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type
ON Semiconductor 2N6111	30 V	150 °C	-65 °C	3.5 V	PNP	1 mA	30	40 W	10 MHz	TO-220-3	TO-220	7 A	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

Technical documentation and resources