G2R1000MT17D

Active

GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO247-3

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	G2R1000MT17D

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	1700 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	111 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	44 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max) [Max]
GeneSiC Semiconductor G2R1000MT17D	1.2 Ohm	5 A	44 W	11 nC	-10 V	25 V	-55 °C	175 ░C	5.5 V	TO-247-3	1700 V	Through Hole	N-Channel	111 pF	TO-247-3
GeneSiC Semiconductor G2R1000MT33J	1.2 Ohm	4 A		21 nC	-5 V	20 V	-55 °C	175 ░C	3.5 V	TO-263-7	3300 V	Surface Mount	N-Channel	238 pF	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	74 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1700 V 5A (Tc) 44W (Tc) Through Hole TO-247-3

Technical documentation and resources