2SB1189T100Q

Rohm Semiconductor

TRANS PNP 80V 0.7A MPT3

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Rohm Semiconductor

TRANS PNP 80V 0.7A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1189T100Q

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Frequency - Transition	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Mounting Type	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor 2SB1189T100R	100 MHz	PNP	180 hFE	700 mA	2 W	Surface Mount	150 °C	400 mV	80 V	TO-243AA	500 nA
Rohm Semiconductor 2SB1189T100Q	100 MHz	PNP	120	700 mA	2 W	Surface Mount	150 °C	400 mV	80 V	TO-243AA	500 nA

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General part information

Bipolar (BJT) Transistor PNP 80 V 700 mA 100MHz 2 W Surface Mount MPT3

Technical documentation and resources