
ESH1JM RSG
ObsoleteTaiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A MICRO SMA
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ESH1JM RSG
ObsoleteTaiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A MICRO SMA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ESH1JM RSG |
|---|---|
| Capacitance @ Vr, F | 3 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | 2-SMD, Flat Leads |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Micro SMA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ESH1 Series
Diode 600 V 1A Surface Mount Micro SMA
Documents
Technical documentation and resources
No documents available