CA3250F

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Harris Corporation

NPN TRANSISTOR ARRAY

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Harris Corporation

NPN TRANSISTOR ARRAY

Technical Specifications

Parameters and characteristics for this part

Specification	CA3250F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Package / Case	18-CDIP
Package / Case	7.62 mm
Package / Case	0.3 in
Power - Max [Max]	750 mW
Supplier Device Package	18-CERDIP
Transistor Type	8 NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	16 V

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Package / Case	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]
Harris Corporation CA3250F	18-CERDIP	40	16 V	8 NPN	100 mA	18-CDIP	7.62 mm	0.3 in	-55 °C	125 °C	10 µA	800 mV	Through Hole	750 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	329	$ 0.91

General part information

Bipolar (BJT) Transistor Array 8 NPN 16V 100mA 750mW Through Hole 18-CERDIP

Technical documentation and resources

No documents available