2N5551YTA

Obsolete

ON Semiconductor

TRANS NPN 160V 0.6A TO92-3

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2N5551YTA

Obsolete

ON Semiconductor

TRANS NPN 160V 0.6A TO92-3

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N5551YTA

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	180 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

2N5551T Series

Small Signal NPN Bipolar Transistor

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor 2N5551CYTA	625 mW	80	600 mA	TO-92-3	TO-226-3 TO-92-3	50 nA	100 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole
ON Semiconductor 2N5551_J18Z	625 mW	80	600 mA	TO-92-3	TO-226-3 TO-92-3	50 nA	100 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole
ON Semiconductor 2N5551RL1	625 mW	80	600 mA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	300 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole	TO-226
ON Semiconductor 2N5551ZL1	625 mW	80	600 mA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	300 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole	TO-226
ON Semiconductor 2N5551TA	625 mW	80	600 mA	TO-92-3	TO-226-3 TO-92-3	50 nA	100 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole
ON Semiconductor 2N5551YTA	625 mW		600 mA	TO-92-3	TO-226-3 TO-92-3		100 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole		180 hFE
ON Semiconductor 2N5551RL1G	625 mW	80	600 mA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	300 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole	TO-226
ON Semiconductor 2N5551RLRMG	625 mW	80	600 mA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	300 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole	TO-226
ON Semiconductor 2N5551_J05Z	625 mW	80	600 mA	TO-92-3	TO-226-3 TO-92-3	50 nA	100 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole
ON Semiconductor 2N5551ZL1G	625 mW	80	600 mA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	300 MHz	-55 °C	150 °C	NPN	200 mV	160 V	Through Hole	TO-226

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N5551T Series

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

No documents available